Semiconductors
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- As the technology node is shrinking from micron to sub-micron and to deep sub-micron, the device size of semiconductor components is getting smaller and smaller to achieve greater functionality.
- The transition to semiconductor manufacturing on 450mm wafers continues to be one of the biggest challenges in the semiconductors industry.
- Gallium sulfide (Ga2S3) belongs to a group of wide bandgap semiconductors with interesting properties for infrared and nonlinear optics applications.
- Silicon is by far the most widely used semiconductor material.
- Incorporation of dopants efficiently in semiconductors at the nanoscale is an open challenge and is also essential to tune the conductivity.
- Electromigration in thin film conductors is recognized as a potential wear-out failure mechanism for semiconductor devices.
- A theoretical study of metal-semiconductor (N-type) rectifying contacts isdeveloped.
- As we tend towards extremely scaled CMOS circuits, InAs material has potential to replace traditional Si technology.
- Polyimide (PI) is widely used in film form as a passivation material for power semiconductor devices of Si, SiC, GaN, etc.
- Recently, advanced designs and materials emerge to study biologically inspired neuromorphic circuit, such as oxide semiconductor devices.
- Wide bandgap oxide semiconductors have been a hot topic in electronic and optoelectronic technologies.
- Some of the III-V semiconductor used in various devices suffer from the surface high density of states limiting their application.
- Radiation-hard semiconductor devices are becoming more important for a growing number of nuclear and space applications.
- It has been thought that In-Ga-Zn-O (IGZO) has very low carrier mobility, as compared to Si, to be used for large-scale integration (LSI).
- Antimony selenide (Sb2Se3) is a p-type semiconductor, considered as an excellent photovoltaic absorber for its high absorption coefficient in the visible region and a nearly optimal band-gap for single-junction solar cells.
- The integration of photoconductive semiconductor switches (PCSSs) into pulsed power systems may have improvements over conventional switching, but failure modes occurring near the illuminated edge of PCSS devices between switching operations present a serious limiting factor.
- High resolution inspection and metrology is an important part of current semiconductor technology and has an increasingly active role as miniaturization is pushed beyond 200 nm.
- Electroplated copper thin films have become indispensable for the interconnections in next-generation semiconductor devices because of its low electric resistivity and high thermal conductivity.
- Doped II-VI chalcogenide semiconductor nanostructures have recently attracted a lot of attention due to the possibility of their application in various modern era devices.
- To meet the challenges in dimensional metrology as the minimum feature size in semiconductor devices approaches sub-35 nm length scales, we have been developing a nondestructive method using x rays termed critical dimension small angle x-ray scattering (SAXS).