mosfet technology
Research Topic
Language: English
This is a research topic created to provide authors with a place to attach new problem publications.
Research problems linked to this topic
- As MOSFET technology reaching its limits, new devices like HEMTs (high electron mobility transistors) are gradually gaining more interests.
- Aggressive scaling of MOSFETs for performance improvement causes a number of challenging problems such as high gate leakage current and poly-Si gate depletion.
- The random dopant fluctuation (RDF) is a dominant source of statistical variability for nano-scale metal-oxide-semiconductor-field-effect-transistors (MOSFETs).
- The low power consumption of CMOS technology has allowed it dominating the semiconductor industry in the last 20 years or so.
- The replacement of the strained Si channel in metal-oxide-semiconductor-field-effect-transistors (MOSFETs) with high electron mobility III-V compound semiconductors, particularly InGaAs, is being intensively investigated as an alternative to improve the drive current at low supply voltages in sub-10 nm CMOS applications.
- Hot-carrier induced degradation is a main issue in the electrical stability of polysilicon TFTs and drain field relief architectures have been introduced, such as lightly doped drain (LDD) and gate overlapped LDD (GOLDD), to improve the stability.
- Negative bias temperature instability (NBTI) in p-channel MOSFETs is well recognized as one of the primary sources of reliability loss in advanced microelectronics devices.