Recently, gallium nitride (GaN) and its related compounds involving Al and In have attracted much attention because of their potential to be used as high-efficiency UV light emitting devices, and as high frequency and high power electronic devices.

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Publication type:Research Problem

Published:December 6, 2022

Language:English

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CC BY 4.0

DOI:

https://doi.org/10.57874/k86g-8524

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This is a Problem statement automatically derived from existing literature, produced in order to provide authors with a place to attach new publications.

Publications above this in the hierarchy

Group III nitride semiconductors (III-N), including GaN, AlN, InN, and their alloys, are currently the materials of choice for many applications in optoelectronics (light-emitting diodes, laser diodes), and high-power and high-frequency transistors.

Research problems below this in the hierarchy

The wide band gap group-III nitride materials continue to generate interest in the semiconductor community with the fabrication of green, blue, and ultraviolet light emitting diodes (LEDs), blue lasers, and high temperature transistors.

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