Group III nitride semiconductors (III-N), including GaN, AlN, InN, and their alloys, are currently the materials of choice for many applications in optoelectronics (light-emitting diodes, laser diodes), and high-power and high-frequency transistors.

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Publication type:Research Problem

Published:December 6, 2022

Language:English

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CC BY 4.0

DOI:

https://doi.org/10.57874/fk7t-mn43

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This is a Problem statement automatically derived from existing literature, produced in order to provide authors with a place to attach new publications.

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The group-III nitrides, InN, GaN, AlN, and their alloys have emerged to one of the most important material classes for opto-electronic devices.

Research problems below this in the hierarchy

Recently, gallium nitride (GaN) and its related compounds involving Al and In have attracted much attention because of their potential to be used as high-efficiency UV light emitting devices, and as high frequency and high power electronic devices.

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