epitaxial growth
Research Topic
Language: English
This is a research topic created to provide authors with a place to attach new problem publications.
Research problems linked to this topic
- Further increase of memory density is very challenging with the existing 2D device structures and therefore will require novel approaches via utilizing the 3rd dimension.
- The 'Q-slope' problem has so far strongly limited the application of niobium thin film sputtered copper cavities in high field accelerators.
- As junction depth requirements approach sub 10 nm and the sensitivity to residual implant damage continues to increase, the capability to produce abrupt, shallow profiles while maintaining low residual damage becomes a difficult challenge.
- As the scaling of silicon (Si) CMOS device continues, new materials such as SiGe, Ge, group III-V semiconductor, CNT, and Graphene are introduced due to the limit of Si CMOS such as short channel effects (SCE) and mobility degradation.
- Advanced reticle specifications for resolution, critical dimension (CD) control and CD linearity of 180-nm generation devices require large-scale improvements to maskmaking processes.
- The growth of epitaxial complex oxides has been essentially limited to specific substrates that can induce epitaxial growth and stand high temperature thermal treatments.
- The demand for improved electronic and optoelectronic devices has fuelled the development of epitaxial growth techniques for single-crystalline semiconductors.
- Rice husk, the main by-product of milling rice paddy and an agro-waste, is available in vast quantities in the rice-growing regions.