optoelectronic
Research Topic
Language: English
This is a research topic created to provide authors with a place to attach new problem publications.
Research problems linked to this topic
- During the past two decades, there have been great interests in developing ways to manip- ulate photons at nanoscale, realizing optical integrations, developing smaller, faster, and more efficient optoelectronic devices for the purpose of next-generation optoelectronic technology.
- The group-III nitrides, InN, GaN, AlN, and their alloys have emerged to one of the most important material classes for opto-electronic devices.
- Ge1-xSnx alloys have recently attracted great research attention for new optoelectronic devices, especially efficient Si-based light emitters.
- Semiconductor p-n junctions are essential building blocks for electronic and optoelectronic devices.
- In2S3 is one of the widely used semiconductors in optoelectronic applications.
- Charge injection to the prevailing and emerging light-emitting devices is almost exclusively based on the double heterojunction (DHJ) structures that have remained essentially unchanged for decades.
- The low-temperature processing of transparent electrodes on polymer substrates is an increasingly important issue in lightweight and flexible optoelectronic devices and low-temperature processing is essential since most polymer substrates cannot withstand high temperatures.
- Fabrication of a two- and three-dimensional (2D/3D) heterojunction device has attracted significant attention for developing high performance photodiodes, light emitting diodes, solar cells, and other electronic devices.