amorphous silicon
Research Topic
Language: English
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Research problems linked to this topic
- The dynamic characteristics of normal and Corbino hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) have been investigated.
- The discovery of photoluminescence properties of highly porous silicon, PS, has recently attracted considerable research.
- Hydrogen's role in the doping efficiency and long term stability of hydrogenated amorphous silicon is not well understood.
- Oxygen precipitation (OP) in the conventional and nitrogen-codoped heavily phosphorous (P)-doped Czochralski silicon (CZ-Si) wafers subjected to various low- (650-850 C) and high-temperature (1050 C) two-step annealing conditions have been comparatively investigated.
- The removal of phosphorus impurities is among the most important problems in the purification of upgraded metallurgical-grade silicon (UMG-Si) used in the preparation of solar-grade silicon (SOG-Si).
- Ge2Sb2Te5 and related phase change materials are highly unusual in that they can be readily transformed between amorphous and crystalline states using very fast melt, quench, anneal cycles, although the resulting states are extremely long lived at ambient temperature.
- The initial process of low temperature (⪅333C) oxidation of crystalline porous silicon anodically produced has been investigated mainly by means of infrared spectroscopy.
- AlP has been widely used as an effective heterogenous nucleus for primary Si phase in hypereutectic Al-Si alloys, but the morphological correlation between AlP and primary Si is still confusing.