Metal-insulator-metal (MIM) capacitors with atomic-layer-deposited Al2O3 dielectric and reactively sputtered TaN electrodes in application to radio frequency integrated circuits have been characterized electrically.

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Publication type:Research Problem

Published:December 6, 2022

Language:English

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CC BY 4.0

DOI:

https://doi.org/10.57874/y0bg-dm76

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