SiC-based devices perform well in high-voltage environments of more than 1200V compared to silicon devices, and are particularly stable at very high temperatures.

S. Octopus

Publication type:Research Problem

Published:December 6, 2022

Language:English

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CC BY 4.0

DOI:

https://doi.org/10.57874/xxyz-7a11

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Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices.

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