The continuous progress made over the past years in terms of material quality and key technological issues combined with a better understanding of the devices' physics have placed silicon carbide (SiC) devices in a position from where they can challenge the present day silicon (Si) solutions in high power/high temperature applications.

S. Octopus

Publication type:Research Problem

Published:December 6, 2022

Language:English

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CC BY 4.0

DOI:

https://doi.org/10.57874/vt5y-8836

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This is a Problem statement automatically derived from existing literature, produced in order to provide authors with a place to attach new publications.

Publications above this in the hierarchy

The physics and technology of metal/semiconductor interfaces are key-points in the development of silicon carbide (SiC) based devices.

Research problems below this in the hierarchy

Due to the large differences in lattice parameters and thermal expansion coefficients, the heteroepitaxial growth of 3C-SiC on Si mainly results in highly defective layers on strongly bent wafers.

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No sources of funding have been specified for this Research Problem.

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This Research Problem does not have any specified conflicts of interest.