high density/low resistivity TaN film grown using ion-induced atomic layer deposition (iALD) has been developed as the metal barrier for nano-scale Cu interconnects.

S. Octopus

Publication type:Research Problem

Published:December 6, 2022

Language:English

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CC BY 4.0

DOI:

https://doi.org/10.57874/fgd4-kk13

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layer deposition

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