InGaAs is a well-developed material system and has been firmly established as a candidate for the high-performance vertical-cavity surface-emitting lasers (VECSELs). InGaAs strained quantum wells (QWs) with GaAs, AlGaAs, and GaAsP barriers are widely used in optically pumped vertical-external-cavity surface-emitting lasers operating at 1𝜇m wavelength band. Although the performances of InGaAs strained QW VECSELs with GaAs, AlGaAs, or GaAsP barrier have been studied experimentally, there is still no theoretical investigation to explain these experimental results.