Due to the large differences in lattice parameters and thermal expansion coefficients, the heteroepitaxial growth of 3C-SiC on Si mainly results in highly defective layers on strongly bent wafers.

S. Octopus

Publication type:Research Problem

Published:December 6, 2022

Language:English

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CC BY 4.0

DOI:

https://doi.org/10.57874/bs05-nh38

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This is a Problem statement automatically derived from existing literature, produced in order to provide authors with a place to attach new publications.

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The continuous progress made over the past years in terms of material quality and key technological issues combined with a better understanding of the devices' physics have placed silicon carbide (SiC) devices in a position from where they can challenge the present day silicon (Si) solutions in high power/high temperature applications.

Research problems below this in the hierarchy

Epitaxial silicon carbide films have been produced on Si (100) substrates by CVD with 90% of the carbon supplied by methane and 10% by propane as compared to 100% by propane (or 100% by any carbon source more reactive than methane).

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